| Summary: | 碩士 === 國立暨南國際大學 === 電機工程學系 === 97 === This thesis will discuss readout circuit of dual-band infrared focal plane array detectors with a digital-to-analog converter to control readout signal and detector bias. The quantum well infrared sensor would be made of GaAs and GaAsAl. The structure of pixel readout circuit uses direct injection as input stage. The current mirror has been added to pixel circuit that formed gate-modulation-input circuit with in-pixel dark current cancellation.
Two digital signals has inputted to digital-to-analog converter. Its functions are to select mid-wave or long-wave output signal and to change detector bias on focal plane array. The dual-band has mid-wave and long-wave detector In-pixel on 50umx50um layout area. The output voltage range is 0.7v and 0.4v at the current interval 1nA and 0.25nA for long-wave and mid-wave at integration time 40us and 60us, respectively. Both the dark current is 100nA. The readout circuit of dual-band detector array has been simulated with digital-to-analog converter.
The 8-bit digital-to-analog converter accomplish uses R-2R ladder structure. The dynamic simulation of circuit has acquired SNDR 51dB when input sine-wave frequency 97kHz, settling time 0.6us, differential non-linearity error of 0.43LSB, integral non-linearity error of 0.32LSB, power dissipation of 3.3mW. Finally, the circuit has been layouted and implemented.
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