| Summary: | 碩士 === 國立成功大學 === 奈米科技暨微系統工程研究所 === 97 === This research uses plane substrates as the one to grow ZnO nanowires and changes different process parameter -such as ratio of O2:Ar、growth temperature、substrate distance etc.- with CVD process to grow ZnO nanowires . Also, the analyses of SEM、TEM、XRD and CL are used to discuss how different growth parameter affect the growth of ZnO nanowires, and by that we can find the best growth parameter to grow ZnO nanowires. Subsequently, with photolithography，we make the folk electrode to be the substrate to grow ZnO nanowires, using the best growth parameter gained from above experiment to do further experiments to change different process parameter( such as distance, position and and angle ) to laterally grow a great number of ZnO nanowires and form a bridge. With SEM, how ZnO nanobridge on the folk electrode can be observed, then sensing device can be done. At last, under different conditions of work temperature and the concentration of ethanol gas, we will discuss the sensitivity and reproduction of the ZnO nanowires gas sensors.
The result of this research indicates that there is one best position for growing ZnO nanowires in furnace, where there are enough Zn and O2 forming ZnO to increase the volume and length of ZnO nanowires. And ZnO nanowires are successfully grown laterally between two electrodes to form a bridge and make a gas sensor. At work temperature of 300℃ and ethanol gas concentration of 1500ppm, the sensibility can reach 97%, and the gas sensor excels in sensitivity、stability and reproduction.
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