Performance Improvement of GaAs Solar Cells Using Photoelectrochemical Oxidation Method

碩士 === 國立成功大學 === 光電科學與工程研究所 === 97 === The purpose of this research is to investigate the passivation mechanism of the window layer (AlGaAs) of GaAs solar cell by using photoelectrochemical oxidation method (PEC). The advantage of this passivation method is using its self-oxidation material to redu...

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Main Authors: Chun-Yen Tseng, 曾俊硯
Other Authors: Ching-Ting Lee
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/54392231118945623884
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spelling ndltd-TW-097NCKU56140462016-05-04T04:26:10Z http://ndltd.ncl.edu.tw/handle/54392231118945623884 Performance Improvement of GaAs Solar Cells Using Photoelectrochemical Oxidation Method 應用光電化學氧化法於砷化鎵太陽能電池之特性研究 Chun-Yen Tseng 曾俊硯 碩士 國立成功大學 光電科學與工程研究所 97 The purpose of this research is to investigate the passivation mechanism of the window layer (AlGaAs) of GaAs solar cell by using photoelectrochemical oxidation method (PEC). The advantage of this passivation method is using its self-oxidation material to reduce the energy loss from the surface states on the window layer. The conversion efficiency of the GaAs solar cell with and without photoelectrochemical oxide treatment would be investigated. The conversion efficiency can be improved due to the reduction of surface state densities. Furthermore, in order to reduce the losses from the solar reflection, double anti-reflection coating was fabricated by electron-beam deposition system. In our research, the conversion efficiency was improved to 15.7% by using the photoelectrochemical oxidation method. Ching-Ting Lee 李清庭 2009 學位論文 ; thesis 50 en_US
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language en_US
format Others
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description 碩士 === 國立成功大學 === 光電科學與工程研究所 === 97 === The purpose of this research is to investigate the passivation mechanism of the window layer (AlGaAs) of GaAs solar cell by using photoelectrochemical oxidation method (PEC). The advantage of this passivation method is using its self-oxidation material to reduce the energy loss from the surface states on the window layer. The conversion efficiency of the GaAs solar cell with and without photoelectrochemical oxide treatment would be investigated. The conversion efficiency can be improved due to the reduction of surface state densities. Furthermore, in order to reduce the losses from the solar reflection, double anti-reflection coating was fabricated by electron-beam deposition system. In our research, the conversion efficiency was improved to 15.7% by using the photoelectrochemical oxidation method.
author2 Ching-Ting Lee
author_facet Ching-Ting Lee
Chun-Yen Tseng
曾俊硯
author Chun-Yen Tseng
曾俊硯
spellingShingle Chun-Yen Tseng
曾俊硯
Performance Improvement of GaAs Solar Cells Using Photoelectrochemical Oxidation Method
author_sort Chun-Yen Tseng
title Performance Improvement of GaAs Solar Cells Using Photoelectrochemical Oxidation Method
title_short Performance Improvement of GaAs Solar Cells Using Photoelectrochemical Oxidation Method
title_full Performance Improvement of GaAs Solar Cells Using Photoelectrochemical Oxidation Method
title_fullStr Performance Improvement of GaAs Solar Cells Using Photoelectrochemical Oxidation Method
title_full_unstemmed Performance Improvement of GaAs Solar Cells Using Photoelectrochemical Oxidation Method
title_sort performance improvement of gaas solar cells using photoelectrochemical oxidation method
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/54392231118945623884
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