Studies of Organic Thin Film Transistor (OTFT) and FieldEffect Transistor (OFET) on Flexible Plastic Substrate

• Main Authors: Tung-Hsiung Tseng, 曾東雄
• Other Authors: Chia-Ling Wei
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/49246974096330617604

碩士 === 國立成功大學 === 電機工程學系碩博士班 === 97 === In this thesis, we used sodium dopant to prepare the N-type Pentacene organic thin film transistor (OTFT) and organic field effect transistor (OFET) on flexible plastic substrate by a thermal evaporation system. We used EDX and ESCA to detect the dopant Na and the Na atomic concentration in the films, while the FTIR was applied to analyze bond structure. In addition, we deposited high transmittance AZO and ITO films as the gate electrode on different buffer layers including SiO2, SnO2 and ZnO. These AZO and ITO films were characterized by Hall measurement system to measure the sheet resistance and resistivity, Ultraviolet/Visible Spectrometer for transmittance measuring, SEM/AFM to examine morphology, and XRD for analyzing crystal structure. Based on the characterization, the deposition parameters of these gate electrode films were optimized, and used to prepare the OTFT and OFET on PC (Polycarbonate) substrate. Experiment results showed the developed OTFT device has the drift mobility of 6.39x10-2cm2/Vs, threshold voltage of 1.72V, driving current of 6.18uA, and on-off current ratio of 103. The drift mobility of 6.39x10-2cm2/Vs is better than that of reported 2x10-2cm2/Vs for the N-type OTFT device using F16CuPc. The developed OFET has a drift mobility of 0.74cm2/Vs and threshold voltage of 10.45V, which are better or comparable to that prepared by pure Pentacene with a drift mobility of 1.2x10-2cm2/Vs。