| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === In recent years, tremendous efforts have been devoted to develop vertical thin-GaN LEDs (V-LEDs). For the fabrication of vertical thin GaN LED, substrate engineering technology play a vital role, It not only serves as a mechanical support for brittle epi-GaN after sapphire removal with laser lift-off, but also enables a vertical and shorter conduction path compared to regular lateral LEDs.
In this study, commercial available Tin-based solder paste were used to form a Tin-based dicing-free metal substrate for the fabrication of V-LEDs. Combined with patterned laser lift-off (LLO) technique, a metal substrate technology was proposed for the fabrication of V-LEDs. Advantages including reserving the merits of metallic substrate and reducing the processing time for the fabrication of vertical-structured GaN-based LEDs were demonstrated. As compared to regular lateral LEDs, the fabricated 40 mil VM-LEDs show an increase in light output power (ΔLOP/LOP)about 226.64 % at 350 mA . A significant decrease in forward voltage about 1.62 V at 350 mA and an improvement in power efficiency about 339 % at 350 mA.
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