Characteristics and Hot Carrier Reliability in 40V n-type LDMOS Transistors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === In this thesis, device characteristics and hot carrier reliability of n-type LDMOS transistors with different device dimension are investigated. The device used in this thesis has four main layout parameters: channel length, accumulation length, length of dr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22495897312119913693 |