Fabrication of Integrated Ⅲ-Nitride Compound Semiconductor Based Gas Sensors

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 ===   Over the past decades, different types of gas sensors were developed. With the quick development of the fabrication technologies, semiconductor based gas sensors with small size and high sensitivity have become the mainstream of the research process.   The...

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Main Authors: Chung-Fu Chang, 張仲甫
Other Authors: Wen-Chau Liu
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/19031959657866434105
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spelling ndltd-TW-097NCKU54280232016-05-04T04:25:26Z http://ndltd.ncl.edu.tw/handle/19031959657866434105 Fabrication of Integrated Ⅲ-Nitride Compound Semiconductor Based Gas Sensors 積體式三-氮族化合物半導體系列氣體感測器之研製 Chung-Fu Chang 張仲甫 碩士 國立成功大學 微電子工程研究所碩博士班 97   Over the past decades, different types of gas sensors were developed. With the quick development of the fabrication technologies, semiconductor based gas sensors with small size and high sensitivity have become the mainstream of the research process.   The studied integrated sensors consisted of different catalytic metals such as Pd, Pt and ZnO. The studied devices are capable of monitoring different gases such as hydrogen, ammonia, and nitrogen dioxide. The AlGaN/GaN layer was used because of its advantages including large band gap (4.3eV), wide operation temperature region, good chemical stability, and high density of two-dimensional electron gas. First, the hydrogen-detection characteristics of a Pd/AlGaN/GaN Schottky diode-type sensor were studied and demonstrated at different temperatures. This device exhibited good sensing performance including high relative sensitivity ratio, large current variation, widespread reverse voltage regime, and fast response time.   Second, the ammonia-detection characteristics of a Pt/AlGaN/GaN Schottky diode-type sensor were studied and demonstrated. Pt catalytic metal dissociates not only hydrogen molecules but also ammonia molecules. At high temperatures, the device exhibited fast transient response time. Finally, the nitrogen dioxide-detection characteristics of a ZnO/AlGaN/GaN resistor-type sensor were studied and demonstrated. Based on the sensing mechanism of metal-oxide material, the oxidizing property of nitrogen dioxide leads to the decrease of ZnO conductance.   In this research, the resistor-type sensor was fabricated with lower resistance to increase the sensitivity. Besides, sensors with large current variation exhibit larger margins to noise interference. Consequently, the integrated sensors show the promise for smart gas sensors and micro-electro-mechanical system (MEMS) application. Wen-Chau Liu 劉文超 2009 學位論文 ; thesis 43 en_US
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description 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 ===   Over the past decades, different types of gas sensors were developed. With the quick development of the fabrication technologies, semiconductor based gas sensors with small size and high sensitivity have become the mainstream of the research process.   The studied integrated sensors consisted of different catalytic metals such as Pd, Pt and ZnO. The studied devices are capable of monitoring different gases such as hydrogen, ammonia, and nitrogen dioxide. The AlGaN/GaN layer was used because of its advantages including large band gap (4.3eV), wide operation temperature region, good chemical stability, and high density of two-dimensional electron gas. First, the hydrogen-detection characteristics of a Pd/AlGaN/GaN Schottky diode-type sensor were studied and demonstrated at different temperatures. This device exhibited good sensing performance including high relative sensitivity ratio, large current variation, widespread reverse voltage regime, and fast response time.   Second, the ammonia-detection characteristics of a Pt/AlGaN/GaN Schottky diode-type sensor were studied and demonstrated. Pt catalytic metal dissociates not only hydrogen molecules but also ammonia molecules. At high temperatures, the device exhibited fast transient response time. Finally, the nitrogen dioxide-detection characteristics of a ZnO/AlGaN/GaN resistor-type sensor were studied and demonstrated. Based on the sensing mechanism of metal-oxide material, the oxidizing property of nitrogen dioxide leads to the decrease of ZnO conductance.   In this research, the resistor-type sensor was fabricated with lower resistance to increase the sensitivity. Besides, sensors with large current variation exhibit larger margins to noise interference. Consequently, the integrated sensors show the promise for smart gas sensors and micro-electro-mechanical system (MEMS) application.
author2 Wen-Chau Liu
author_facet Wen-Chau Liu
Chung-Fu Chang
張仲甫
author Chung-Fu Chang
張仲甫
spellingShingle Chung-Fu Chang
張仲甫
Fabrication of Integrated Ⅲ-Nitride Compound Semiconductor Based Gas Sensors
author_sort Chung-Fu Chang
title Fabrication of Integrated Ⅲ-Nitride Compound Semiconductor Based Gas Sensors
title_short Fabrication of Integrated Ⅲ-Nitride Compound Semiconductor Based Gas Sensors
title_full Fabrication of Integrated Ⅲ-Nitride Compound Semiconductor Based Gas Sensors
title_fullStr Fabrication of Integrated Ⅲ-Nitride Compound Semiconductor Based Gas Sensors
title_full_unstemmed Fabrication of Integrated Ⅲ-Nitride Compound Semiconductor Based Gas Sensors
title_sort fabrication of integrated ⅲ-nitride compound semiconductor based gas sensors
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/19031959657866434105
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