Photolysis Studies of CF4-nCln (n=1~3) adsorbed onSi (111)-7×7 by using 19~40 eV photons

• Main Authors: Kuo-shu Feng, 馮國書
• Other Authors: Ching-Rong Wen
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/94669505747323102564

碩士 === 國立成功大學 === 物理學系碩博士班 === 97 === We use monochromatic synchrotron radiation in Shinchu NSRRC (National Synchrotron Radiation Research Center) as the light source to investigate the physical and chemical characters on the surface of Si(111)-7×7 at temperature 30 K, which dosed with CF3Cl、CF2Cl2 and CFCl3 molecules, respectively. At first we use 29 eV photon to incident three different surface：0.3×1015molecules/cm2 CF3Cl、0.2×1015 molecules/cm2 CF2Cl2 and 0.1×1015molecules/cm2 CFCl3 dosed on the substrate Si(111)-7×7. We obtain a series of sequential PES spectrum from the three surfaces, and we can analysis their peaks from these data. We further discuss by comparing their photolysis cross section between three series of sequential PES spectrum of CF3Cl、CF2Cl2 and CFCl3 dosed on the Si(111)-7×7 surface to study for the physical properties. Next we use 19~40 eV photon to do a continuous scan on two different surfaces, submonolayer(0.3×1015molecules/cm2) and multilayer (0.8×1015molecules/cm2) CF3Cl dosed on Si(111)-7×7, the scan interval is 0.1 eV. Then we obtain a series of continuous F+ PSD spectrum from the two surfaces, and then we discussing the physical mechanism of why F+ signal will increase with photon exposure. At last, we compare our data with J.A. Yarmoff’s research group[25], and we present the reason of why F+ threshold in the PSD spectrum will change with photon exposure and how it desorb from the substrate Si(111)-7×7.(CF3Cl dose= 0.3×1015molecules/cm2)