| Summary: | 碩士 === 國立成功大學 === 物理學系碩博士班 === 97 === The dynamical behavior of carriers near the surface of a semiconductor had been an important issue in various applications of semiconductor devices. Some evanescent states may appear at the semiconductor surface. These surface states cause charge re-arrangement, and render the band-bending. In this thesis, we assumed a model of Gaussian distributive surface state within the band gap to study the band bending as functions of surface state density, distribution width, the doping concentration, and temperature. When the surface-state density is larger than , the Fermi-level on the surface is pinned at the energy of surface state.
Introducing an intrinsic layer between the surface and the doped semiconductor to form the SIN structure, we can further study the effect of the intrinsic layer width to the band-bending. This preliminary study sets the scenario for future investigations on carrier dynamics under luminescence.
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