| Summary: | 碩士 === 國立勤益科技大學 === 機械工程系 === 97 === Aluminum-doped zinc oxide (AZO) films have their advantages due to the high conductivity, high transparency, cheap value, good stability and absence of toxicity. AZO films have many applications such as electro-optical devices, plastic liquid crystal display devices, transparent electromagnetic shielding materials and transparent electrode of thin film solar cell devices. In this study, AZO films were prepared by DC magnetron sputtering on glass substrates with specifically designed AZOY target. Systematic study on dependence of working pressure and substrate temperature on microstructure, surface morphology, compositions, electrical and optical properties of the AZO films grown at a power of 80W.
XRD results show that highly preferred AZO crystal in the (002) direction was grown in parallel to the substrate at different working pressure. The as-grown AZO films have an average transmittance of above 85% at the visible region. The resistivity of the film deposited under working pressure of 3 mtorr with thickness of 500 nm was approximately 7.6×10-4Ω-cm. A high transparency, as well as a low resistivity of 5.5×10-4Ω-cm, was obtained at a substrate temperature of 200 ℃. The higher substrate temperature leads to improvement of crystallinity, kinetic energy and mobility of surface absorption atoms and increased carrier concentration in the transmission spectra and electric property of AZO thin films.
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