Analyzed the external quantum efficiency of patterned GaN-based light-emitting diodes
碩士 === 國立中興大學 === 精密工程學系所 === 97 === In this thesis, the internal quantum efficiency of the InGaN-based light emitting diodes were analyzed through dependent micro-photoluminescence (μ-PL) spectrum, bias-dependent μ-PL spectrum, and lower-current injection μ-PL spectrum by varying the temperature fr...
Main Authors: | Jhan-Hong Ye, 葉展宏 |
---|---|
Other Authors: | 林佳鋒 |
Format: | Others |
Language: | zh-TW |
Online Access: | http://ndltd.ncl.edu.tw/handle/40813403346696696032 |
Similar Items
-
The Study on InGaN/GaN Light Emitting Diode External Quantum Efficiency
by: jeng hsin,liou, et al.
Published: (2005) -
Improved Efficiency of InGaN/GaN Light-emitting Diode Using Silver-doped-textured Zinc Oxide
by: Sheng-Jhan Ye, et al.
Published: (2013) -
Improved external quantum efficiency and increase light-extraction efficiency of GaN Light-Emitting Diodes.
by: May-Jaue, Huang, et al.
Published: (2005) -
Enhancement of external quantum efficiency for GaN-based blue light emitting diodes on patterned sapphire substrate
by: Bor-Jye Su, et al.
Published: (2006) -
Investigation and Fabrication of GaN-based Blue Light Emitting Diode with High Light Extraction and Quantum Efficiency
by: Ping-HungChen, et al.
Published: (2015)