| Summary: | 碩士 === 國立中興大學 === 精密工程學系所 === 97 === In this thesis, the internal quantum efficiency of the InGaN-based light emitting diodes were analyzed through dependent micro-photoluminescence (μ-PL) spectrum, bias-dependent μ-PL spectrum, and lower-current injection μ-PL spectrum by varying the temperature from 10K to 300K. The IQE measurements under the lower injection current and the applying bias voltages conditions were reasonable for the actual operating LEDs. During the bias-dependent μ-PL measurement, the injection current induced EL emission at forward voltage, and the tunneling current induced leakage current at reverse voltage are affected the μ-PL measurement and the calculated IQE values. The LED operated at the open circuit condition (Voc, zero current condition) had the reasonable IQE values compared to the conventional temperature-dependent μ-PL measurement. For the EL IQE measurement, the ratio of between the EL intensity at RT to peak EL intensity by varying the temperature was defined as the EL IQE value. The IQE values in different LED structures were analyzed through the temperature-dependent PL and EL measurements.
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