Analysis on 90nm MOSFET of Radio-Frequency Characteristics and Compromised Design of X-Band Voltage-Controlled Oscillator

Analysis on 90nm MOSFET of Radio-Frequency Characteristics and Compromised Design of X-Band Voltage-Controlled Oscillator

碩士 === 國立中興大學 === 電機工程學系所 === 97 === In this thesis, RF characteristics of multi-finger (MF) type MOSFET have been analyzed. This work studied the relationship between small-signal model of P-type MOSFET and layout geometry. The impact factors of gate resistance of MOSFET could involve two main item...

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Bibliographic Details
Main Authors:	Ting-Hao Peng, 彭廷皓
Other Authors:	許�睇�
Format:	Others
Language:	zh-TW
Published:	2009
Online Access:	http://ndltd.ncl.edu.tw/handle/17442569541110553675

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