The Study of Controlling ArF Excimer Laser

• Main Author: 鄭東明
• Other Authors: 林振義
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/21700667312567070487

碩士 === 明新科技大學 === 電機工程研究所 === 97 === This study aims at the application of 193nm ArF Excimer Laser in the photolithography process in semiconductor processes since FWHM, or Full Width at Half Maximum, and E95% are vitaly influential on semiconductor processes. In particular, the semiconductor process technology is going to enter the process of 45nm physical limit, and a NA, or Numerical Aperture, will be increased by means of the ArF wet method, which will save the semiconductor process cost, directly skip F2 Excimer Laser (157 nm), a laser generation, and greatly reduce the R&D duration and cost. The research focuses on finding out all the items relevant to the influences on the output quality of E95 laser, including the influences of laser resonant paths, gas concentration, various operating temperatures, etc. on laser quality. ArF Excimer Laser can influence the process technology of NAND Flash, and it has significant influences on the 16G or 32G SSDs produced by 75nm in 2007 and by 60nm, 58nm, and 40nm in 2008. Light sources are critical for the progress of all the electronic industries and semiconductor processes. All the optical progress will dominate the future and the progressing speed of electronic industries.