| Summary: | 碩士 === 明新科技大學 === 化學工程研究所 === 97 === This investigation is performed by Electrochemical Impedance Spectroscopy (EIS) with various additive 1,10-phenanthroline concentration which could influence electroplate reaction mechanism. Determined by observing the semicircle generated from EIS can be get uncompensated resistance(Rs), charge transfer resistance(Rct) and electric double layer capacitance(Cdl). The equivalent circuit simulation was carried out by using the copper as working electrode. These results show the charge transfer resistance on additive-free was 28.06Ω, and when the additive concentration was increased 10ppm the charge transfer resistance was decreased 20.26Ω. But at additive concentration of 100ppm the diffuse appearance presented, and 45° vertical line on low frequency was observed .
Additionally observation of surface morphology of thin film by using scanning electron microscope(SEM) or metallurgical microscope(MM), and measurement of crystal structure was carried out by using X-ray powder diffractmeter (XRPD). Finally measure the additive in four-point probe to observe the changes of thin film resistance. It is discovered at high-concentration level of 1,10-phenanthroline(50ppm) during the electroplate, the surface morphology of copper deposition was smoothed and the grain size was decreased 24.25nm.
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