| Summary: | 碩士 === 明道大學 === 材料科學與工程學系碩士班 === 97 === Abstract
Technology CAD (Technology Computer Aided Design, or TCAD) is a branch of electronic design automation that models semiconductor fabrication and semiconductor device operation.
A computer model for a simulation of silicon-based thin film solar cells based on a variety of physical models is discussed. The purpose of this research is develop a platforms between experimental and simulation using by VHF-PECVD and TCAD software.
In this article, by means of modeling and numerical computer simulation, the influence of i-layer thickness, p-layer thickness, p-layer concentration, n-layer thickness and n-layer concentration on the solar cell performance is investigated. The studying in conjunction with computer modeling to analyze and explain the relative performances of solar cells in which either a-Si:H, a-SiC:H and a-SiGe:H is used as the intrinsic layer and a-SiC:H as the p-layer are used. Finally, the problems encountered in incorporating this material into a-Si:H/a-Si:H and a-Si:H/?徯-Si:H tandem solar cell are discussed.
We perform several simulations changing i-layer thickness, p-layer thickness, p-layer concentration, n-layer thickness, n-layer concentration the properties of a-SiC:H films and the properties of a-SiGe:H films. The simulated performance of amorphous silicon solar cell including open circuit voltaic (Voc), short circuit current density (Jsc), fill factor (FF), efficiency (%), J-V curves and EQE curves are observed.
This study improves the understanding of this device and to derive arguments for design optimization. After optimizing the simulation parameters, the thin film solar cell with efficiency of 11 ?s was obtained by TCAD simulated technology.
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