Ultra Low-power VCO Designed with Body-biased Technology and High Conversion Gain Mixer Designed with Body-injected Technology

• Main Authors: Chih-Chieh Yu, 尤致捷
• Other Authors: Hwan-Mei Chen
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/26686782675382937801

碩士 === 龍華科技大學 === 電子工程研究所 === 97 === An ultra low-power voltage control oscillator (VCO) designed with body-bias technology and high conversion gain mixer designed with body-inject technology are studied of this thesis. The oscillator portion uses a pMOS cross-coupled structure, while the mixer modifies from Gilbert Cell topology with local oscillator (LO) signal inject into body of MOS. The ultra low-power VCO designed is operating in 5GHz band. The proposed VCO is implemented in TSMC 0.18-μm 1P6M CMOS technology. With 0.49-V supply, it achieves a phase noise of -114.8 dBc/Hz at 1-MHz offset. Tuning range is 340MHz with control voltage from -1V to 1.5V. Figure-of-Merit (FoM) is -188.5dB, and the total power consumption is 0.99mW. The high-gain mixer is designed to be used in 5.2GHz U-NII band. The proposed mixer is implemented in TSMC 0.18-μm 1P6M CMOS technology. The down-converted intermediate frequency (IF) is 55MHz. With 0.8-V supply, it achieves conversion gain of 13.22 dB and SSB noise figure of 18.747 dB. The 1dB compression point is -25.16 dBm. Input Third-order Intercept Point(IIP3) is -14.998 dBm. Isolation of RF to IF is 86.8 dB and isolation of LO to RF is 59.7 dB. The total power consumption is 0.698 mW.