| Summary: | 碩士 === 國立高雄應用科技大學 === 光電與通訊研究所 === 97 === The purpose of this thesis is to fabricate a silicon infrared micro-emitter on a silicon wafer. In our work, we designed plate-type thermal infrared micro-emitters and bridge-type micro-emitters. In our process design, p+ diffusion process was used in order to reduce the device resistivity. We also try to study the fabrication of a suspended silicon nano-wire in this thesis.
In order to protect aluminum bonding pads during etching process, dual doped TMAH solutions with TMAH concentration of 2％ and 5％ were adopted and estimated at the temperature of 70℃, 80℃ and 90℃.We found that the etch rate of aluminum is negligible in the 5% TMAH solution doped with 45.6gm/l silicic acid and 7gm/l AP at 90℃ and the etch rate of <100> silicon is 10613Å/min in 5% TMAH solution doped with 30.4gm/l silicic acid and 7gm/l AP at 80℃.
In this study, a silicon bridge-type micro-emitter with a resistance of 200Ω was successfully completed and measured. As the bias current was up to 38mA, we can find the device glowed. Finally, our ANSYS simulation result shows the central temperature of the bridge is up to 1300℃ under 0.6W operation power.
Keyword: Thermal Infrared Microemitter, Suspended Membrane, Silicon
Microbridge, Suspended silicon nanowire structures, Dual Doped TMAH.
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