The Simulation and Analysis of Conventional and Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

The Simulation and Analysis of Conventional and Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

碩士 === 義守大學 === 電子工程學系碩士班 === 97 === In this thesis, the characteristics of conventional metamorphic high-electron-mobility transistor (MHEMT) and metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) are simulated and compared. By solving the one-dimensional Poisson’s...

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Bibliographic Details
Main Authors:	Yan-huei Lee, 李彥輝
Other Authors:	Jung-sheng Huang
Format:	Others
Language:	zh-TW
Published:	2009
Online Access:	http://ndltd.ncl.edu.tw/handle/20747738751392880220

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