Studies of Nitrogen Doped Zinc Oxide Thin Films by Ion Beam Sputtering at Room Temperature

• Main Authors: CHIANG YUEH SHENG, 江岳聲
• Other Authors: 徐進成
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/25884953428158114564

碩士 === 輔仁大學 === 物理學系 === 97 === The study of ZnO films doping nitrogen was deposited by ion-beam sputter deposition (IBSD). Two deposition approaches using IBSD technique at the room temperature with different working gases、nitrogen and argon、were examined to fabricate the ZnO:N films. One was using nitrogen as the working gas in which processes the nitrogen ion sputtered the Zn target under a well-controlled oxygen partial pressure such that ZnO:N films were formed. The other one used the N2O gas as an ambient gas and the argon working gas was fed into the ion source during the deposition; a p-type ZnO:N film was obtained. A correlation between the electrical properties and nitrogen concentrations in the film indicates the hole concentration was the dominant factor to fabricate a p-type semiconductor with better electrical properties. The formation of Zn3N2 crystals hinted that the replacement of O by N in the film、i.e.、hole was possibly created by the substitution of O2- ions with N3- ions.