Investigations on Γ Gate AlGaN/GaN High-Electron-Mobility-Transistors
碩士 === 逢甲大學 === 電子工程所 === 97 === In this thesis, a novel device processing method to fabricate a SiN-passivated Γ-gate MHEMT has been investigated on AlGaN/GaN HEMT’s. Gate length reduction, SiN surface passivation, and a field-plate structure can be achieved at the same time to improve the device p...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78462303357136998179 |