Study of Electrical Characteristics for Metal Nanocrystal MOS Structures
碩士 === 逢甲大學 === 電子工程所 === 97 === After thin Pd metal deposition, an annealing step at high temperature was performed to manufacture metal nanocrystals on tunneling dielectric. Two different tunneling oxide materials were tested, including silicon oxide and hafnium aluminum oxide. In the experiment,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72971725671019434101 |