| Summary: | 碩士 === 逢甲大學 === 電子工程所 === 97 === After thin Pd metal deposition, an annealing step at high temperature was performed to manufacture metal nanocrystals on tunneling dielectric. Two different tunneling oxide materials were tested, including silicon oxide and hafnium aluminum oxide. In the experiment, we will discuss the effects of different annealing temperature, not only on the nanocrystal size and density, but also on the electrical characteristics for metal nanocrystal MOS structures. The results showed that a smaller nanocrystal size and higher nanocrystal density can be observed for the High-K materials. Although high-temperature annealing of metal nanocrystals could be produced, but the quality of blocking oxide and tunneling oxide has seriously affected. The defects in blocking oxide can lead to a clockwise C-V hysteresis curve. According to a poor retention data, even though a large loop of counterclockwise C-V hysteresis curve can be obtained, most electrons is stored in the defects around Pd nanocrystals. Therefore, it is necessary to avoid defects result from annealing process or remove the defects by using additional processes.
|
|---|
