Photoelectric Characteristics of GaN-based Light Emitting Diodes Using Different Surface Roughness Technologies
碩士 === 逢甲大學 === 產業研發碩士班 === 97 === This research studies the gallium nitride (GaN) layer of group III-V semiconductor materials on C-plane (0001) sapphire substrate as a light emitting film by the epitaxial growth technique using metal-organic chemical vapor deposition instrumentation (MOCVD). Three...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82187949962043355896 |