| Summary: | 碩士 === 清雲科技大學 === 電子工程系所 === 97 === In this paper, we report an all-soluble process for the carbon nanotube organic thin film transistors (CNT-OTFTs) by combining the liquid-phase-deposition (LPD) oxide, soluble CNTs and nano-metal particles. First, the CNT powders are dissolved in the sodium sulfate (SDS) and water by the ultrasonic mix. Then the CNT films are coated by spin-on process and baked in 90oC. In this report, the CNT layers are used as the active channel and metal electrodes. In some devices, we use the silver as the electrodes. For the silver electrodes, the nano silver particles are dissolved in the ethylene glycol in the different ratios. In order to avoid the organic solvent damage the underlying layer and suppress the leakage current in the OTFTs, we use a water-based LPD silicon oxide as the gate insulator and passivation layer. This oxide is deposited at 50oC by using the hydrofluosilicic acid (H2SiF2) and water.
In this report, the top-contact CNT-OTFTs are completed without using any vacuum process. Before coating the CNT films as the channel layer and electrodes, the CNT solution is filtered and the undissolve CNT powders is removed. After completing the CNT OTFTs., the electrical properties of these devices are measured by the Agilent 4156C in the air. Due to both the CNTs and silicon oxide are air-stable materials, the devices by using new process show the good characteristics
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