ANALYSIS AND IMPROVEMENT OF INSERTED AND BUTTING SUBSTRATE PICKUP LAYOUT STYLE IN ESD NMOS DEVICES
碩士 === 清雲科技大學 === 電子工程系所 === 97 === In multi-finger ESD NMOS, the butting or inserted layout of the substrate/well pickups of MOSFETs strictly degrades ESD robustness owing to the substrate resistance shorting effect. Therefore, this thesis studies on this layout restriction issue in detail. Extrins...
Main Authors: | Po-Kuan Sung, 宋柏寬 |
---|---|
Other Authors: | 黃至堯 |
Format: | Others |
Language: | en_US |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/63653979465602026546 |
Similar Items
-
ANALYSIS AND IMPROVEMENT OF INSERTED AND BUTTING SUBSTRATE PICKUP LAYOUT STYLE IN ESD NMOS DEVICES
by: Po-Kuan Sung, et al.
Published: (2008) -
A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability
by: Chih-Yao Huang, et al.
Published: (2015-01-01) -
ESD NMOS Devices and Circuits of Substrate Gate Triggering and Substrate pickup Adjustment
by: Bo-Chen Lin, et al.
Published: (2011) -
Substrate Pick-Up Style Analysis and Design of Electrostatic Discharge (ESD) NMOS
by: tzu-lin yuan, et al.
Published: (2005) -
Study of Source and Body Contacts Layout Design to High Voltage NMOS ESD Protection Devices
by: Ho-Chun Wu, et al.
Published: (2009)