| Summary: | 碩士 === 長庚大學 === 光電工程研究所 === 97 === Abstract
Zinc oxide (ZnO) in recent years was the more popular research material because the ZnO has the unique nature and various application. ZnO is a semiconductor, with a proper band gap (3.37 eV) and large exciton binding energy (60 meV) [1]. Therefore suitable to make many optics applications. The ZnO is intrinsic semiconductor, but uses the way change ZnO optical character which by skill and doping, achievement more applications is the research priority objective. This experiment used simple hydrothermal to grow indium doping ZnO nanostructure on silicon wafer, and then annealing under different temperature (400℃-1000℃) oxygen atmosphere annealing. Then discussion ZnO nanomaterials of surface structure and optical character.
We analyzed structure and superficial state of ZnO by used x-ray diffraction (XRD), scanning electron microscope (SEM). ZnO optical measurements used the temperature-dependent and power-dependent photoluminescence (PL) spectra, whether there was annealing or not, PL spectra show the ZnO near band edge ultraviolet ray of the wave length close 380nm, nearby wave length 405 nm has the visual violet [2]. Besides this, there are yellow-orange emission which wave length 580nm-640nm is associated with excess oxygen [3]. Under PL measurements, the peak energy of yellow-orange emission has blue-shift when the temperature increment and the laser power increases. The blue-shift tendency has the first rise then fall situation.
The PL intensity of ZnO sample oxygen vacancy illumination will rise along with temperature which is different in the common semiconductor. There are two creates reason of the blue shift phenomenon; one is because the thermal contraction of lattice, another ways is oxygen vacancy of ZnO illumination.
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