Investigation of High Quality GaN Film Grown on Boron-implanted Silicon Substrate

• Main Authors: Ting Ying Chen, 陳亭媖
• Other Authors: N. C. Chen
• Format: Others
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/47080948775607571979

碩士 === 長庚大學 === 光電工程研究所 === 97 === This thesis investigated the improvement of lattice mismatch and crystal quality of the GaN film which dependant on results of experiment measurement. The boron-implanted Si substrates were treated with various annealing temperatures before growing GaN film grown on it. Meanwhile, the reference sample which without implantation was compared with implanted samples. The essential purpose of this research is utilizing strain control to grow nitride device on the Si substrates. This conception can be applied to integrate nitride and silicon devices on the same chip. Therefore, implanted Si substrates were formed P-N junction which simulated as the basis Si devices. Consequently, using c-axis lattice constant, photoluminescence (PL), X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscope (AFM) and scanning electron Microscope (SEM) etc. experimental results determined qualities of GaN grown on Si substrates. The experimental results indicated that the dislocation density reduced with annealing temperature increased. And the crystal quality of GaN film was improved, too.