Mobility Enhancement and Anisotropy of Poly(3-hexylthiophene) Thin-Film Transistor on Grooved Dielectric Layer

• Main Authors: Yen-chang Ku, 辜彥璋
• Other Authors: J. W. John Cheng
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/43254699814789588410

碩士 === 國立中正大學 === 光機電整合工程所 === 97 === Recently, organic thin film transistors (OTFTs) have been widely studied due to their potentials in low-cost, large-area and flexible electronics. However, the carrier mobilities of all reported OTFTs are too low to be useful for high-speed electronics or integrated circuits. Thus, how to improve the carrier mobility becomes the most urgent challenge of the OTFT research. One way to improve the carrier mobility is to enhance the structural order of the active semiconductive layer of the OTFT. The device would have high carrier mobility if its active layer had highly ordered crystalline structures. The thesis proposed using patterned insulating layer to be the alignment layer which led to promote the mobility about 2 times with mobility anisotropy. On the other hand, we found the spin direction of active layer also effected the mobility and the maximum anisotropy in mobility was 1.5.