Finite Difference Time Domain Analysis of Ultra-broadband Enhanced Absorption of Silicon Surface with Nanostructures

• Main Authors: Jian-sheng Wu, 吳建昇
• Other Authors: Hsiang-Chen Wang
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/89394919817611477493

碩士 === 國立中正大學 === 光機電整合工程所 === 97 === We investigate the ultra-broadband enhanced absorption properties in a wavelength range of 300~1000 nm for silicon surface with nanostructures by using finite difference time domain (FDTD) algorithm. Three different types of surface structures including cone-like, air-hole, and inverted Pyramids structures are simulated. We demonstrate absorptance enhancement of silicon surface with varying different geometric arrangements, structure sizes, and shapes. The best enhancement structure is cone-like type which can suppress the reflection of surface about 2%~4%. We design a special arrangement for air-hole type surface that can increase the absorption of solar cell surface about 64.5%. In the inverted Pyramids structures, we find the U shape of structure will increase the absorption efficiency due to a gradual change of refractive index. The physics of such remarkable absorption for the structured silicon surfaces are discussed as well. Hence, we also find that results of 8-beam and 9-beam interferometric ablation in silicon surface structure can trap more light.