Finite Difference Time Domain Analysis of Ultra-broadband Enhanced Absorption of Silicon Surface with Nanostructures

碩士 === 國立中正大學 === 光機電整合工程所 === 97 === We investigate the ultra-broadband enhanced absorption properties in a wavelength range of 300~1000 nm for silicon surface with nanostructures by using finite difference time domain (FDTD) algorithm. Three different types of surface structures including cone-lik...

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Bibliographic Details
Main Authors: Jian-sheng Wu, 吳建昇
Other Authors: Hsiang-Chen Wang
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/89394919817611477493
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Summary:碩士 === 國立中正大學 === 光機電整合工程所 === 97 === We investigate the ultra-broadband enhanced absorption properties in a wavelength range of 300~1000 nm for silicon surface with nanostructures by using finite difference time domain (FDTD) algorithm. Three different types of surface structures including cone-like, air-hole, and inverted Pyramids structures are simulated. We demonstrate absorptance enhancement of silicon surface with varying different geometric arrangements, structure sizes, and shapes. The best enhancement structure is cone-like type which can suppress the reflection of surface about 2%~4%. We design a special arrangement for air-hole type surface that can increase the absorption of solar cell surface about 64.5%. In the inverted Pyramids structures, we find the U shape of structure will increase the absorption efficiency due to a gradual change of refractive index. The physics of such remarkable absorption for the structured silicon surfaces are discussed as well. Hence, we also find that results of 8-beam and 9-beam interferometric ablation in silicon surface structure can trap more light.