The study and fabrication of vertical structure GaN-based light-emitting diodes with a reflection mirror layer

• Main Authors: Yu-Ying Chen, 陳毓穎
• Other Authors: Cheng-Hau Ko
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/04403872059491665642

碩士 === 元智大學 === 電機工程學系 === 96 === In this thesis, we use the wafer bonding technique and laser lift off technique for the fabrication of vertical structure GaN-based light-emitting diodes with a reflection mirror layer. The epi-layer transfer on the Si substrate could be operated in a much higher injection forward current. The significant improvement might be caused by the Si substrate which has higher thermal conductivity than conventional Sapphire substrate. In experiment, surface treatment to the up most GaN-based epi-layer using inductive coupling plasma (ICP) dry etching and KOH solution wet etching together was proposed to further enhance the performance of vertical structure LEDs. Finally, the result is the brightness of vertical structure LEDs higher then conventional LEDs.