New Protection Eletric Circuit Design on LTPS TFT LCD Electro-Static Discharge
碩士 === 元智大學 === 電機工程學系 === 96 === A new circuit design of electro static discharge (ESD) is proposed. In order to increase the ability of ESD protection, we design a diode ring in LTPS TFT LCD. LTPS TFT LCD is tested by ESD simulator and ESD current is measured by current probe. Without diode ring,...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/38263416205920625548 |
id |
ndltd-TW-096YZU05442032 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-096YZU054420322015-10-13T13:48:21Z http://ndltd.ncl.edu.tw/handle/38263416205920625548 New Protection Eletric Circuit Design on LTPS TFT LCD Electro-Static Discharge 低溫多晶矽薄膜電晶體液晶顯示器靜電防護電路創新設計 Cheng-huang Yu 游政煌 碩士 元智大學 電機工程學系 96 A new circuit design of electro static discharge (ESD) is proposed. In order to increase the ability of ESD protection, we design a diode ring in LTPS TFT LCD. LTPS TFT LCD is tested by ESD simulator and ESD current is measured by current probe. Without diode ring, the ESD simulator input voltage is 200V, a 844mA static current is obtained. With diode ring, when the static current equal to 844mA, the ESD simulator input voltage is 280V. In our new circuit design, the ESD simulator voltage has been elevated from 200V to 280V, which indicates a 40% voltage rise. Sheng-Ci Zhou 周勝次 2008 學位論文 ; thesis 46 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 元智大學 === 電機工程學系 === 96 === A new circuit design of electro static discharge (ESD) is proposed. In order to increase the ability of ESD protection, we design a diode ring in LTPS TFT LCD. LTPS TFT LCD is tested by ESD simulator and ESD current is measured by current probe. Without diode ring, the ESD simulator input voltage is 200V, a 844mA static current is obtained. With diode ring, when the static current equal to 844mA, the ESD simulator input voltage is 280V. In our new circuit design, the ESD simulator voltage has been elevated from 200V to 280V, which indicates a 40% voltage rise.
|
author2 |
Sheng-Ci Zhou |
author_facet |
Sheng-Ci Zhou Cheng-huang Yu 游政煌 |
author |
Cheng-huang Yu 游政煌 |
spellingShingle |
Cheng-huang Yu 游政煌 New Protection Eletric Circuit Design on LTPS TFT LCD Electro-Static Discharge |
author_sort |
Cheng-huang Yu |
title |
New Protection Eletric Circuit Design on LTPS TFT LCD Electro-Static Discharge |
title_short |
New Protection Eletric Circuit Design on LTPS TFT LCD Electro-Static Discharge |
title_full |
New Protection Eletric Circuit Design on LTPS TFT LCD Electro-Static Discharge |
title_fullStr |
New Protection Eletric Circuit Design on LTPS TFT LCD Electro-Static Discharge |
title_full_unstemmed |
New Protection Eletric Circuit Design on LTPS TFT LCD Electro-Static Discharge |
title_sort |
new protection eletric circuit design on ltps tft lcd electro-static discharge |
publishDate |
2008 |
url |
http://ndltd.ncl.edu.tw/handle/38263416205920625548 |
work_keys_str_mv |
AT chenghuangyu newprotectioneletriccircuitdesignonltpstftlcdelectrostaticdischarge AT yóuzhènghuáng newprotectioneletriccircuitdesignonltpstftlcdelectrostaticdischarge AT chenghuangyu dīwēnduōjīngxìbáomódiànjīngtǐyèjīngxiǎnshìqìjìngdiànfánghùdiànlùchuàngxīnshèjì AT yóuzhènghuáng dīwēnduōjīngxìbáomódiànjīngtǐyèjīngxiǎnshìqìjìngdiànfánghùdiànlùchuàngxīnshèjì |
_version_ |
1717744110437138432 |