Characterization of GaAs pHEMT by Quasi-Nonlinear Modeling Approach with Volterra-Series Analysis
博士 === 元智大學 === 電機工程學系 === 96 === In this dissertation, explicit extracting procedures for nonlinear transconductances and capacitances of GaAs pseudomorphic high electron mobility transistors (pHEMTs) are presented for Volterra-series circuit analysis. Nonlinear transconductances are acquired by th...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64862626885169631181 |
| Summary: | 博士 === 元智大學 === 電機工程學系 === 96 === In this dissertation, explicit extracting procedures for nonlinear transconductances and capacitances of GaAs pseudomorphic high electron mobility transistors (pHEMTs) are presented for Volterra-series circuit analysis. Nonlinear transconductances are acquired by the low-frequency harmonic measurements with the associated phase polarities at various attenuations. Biased-dependent scattering parameter (S-parameter) measurements are utilized with the curve-fitting processes to deduce the nonlinear capacitances. The extracted data up to third order nonlinearities are validated by the two-tone signal tests in a bias-range of 180 mA to 250 mA and a power sweep of ?{9.3 dBm to 6.7 dBm, respectively. This device characterization is quite useful for intermodulation reduction of power amplifier designs in modern digital wireless communications.
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