Fabrication and Stability Analysis for the Sodium Ion Sensor
碩士 === 雲林科技大學 === 光學電子工程研究所 === 96 === We employed the separative extended gate field effect transistor (SEGFET) and the entrapment method to fabricate the sodium ion-selective electrode. The advantages are easy package, easy preservation, and better stability. The SEGFET based on the structure of t...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04881715361045153250 |
| Summary: | 碩士 === 雲林科技大學 === 光學電子工程研究所 === 96 === We employed the separative extended gate field effect transistor (SEGFET) and the entrapment method to fabricate the sodium ion-selective electrode. The advantages are easy package, easy preservation, and better stability. The SEGFET based on the structure of the ruthenium oxide/silicon substrate (RuO2/silicon substrate) and sensing membranes for measuring the sodium ion solutions. The sensing membranes have been fabricated for poly(vinyl choride)(PVC) matrix the sodium ion ionophores (B12C4). The sensitivity of sodium ion-selective electrode is 57.26 mV/pNa, and the linear regression is 0.996 between 1M and 10-5 M sodium ion concentrations. It has rapid response time which is 13 seconds in 10-1M NaCl solution. In addition, we measured the non-ideal effect and interference of the sodium ion-selective electrode. The hysteresis width is the voltage difference between the start point and end point that is 1.62 mV. The working temperature is between 25℃ and 45℃.
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