Fabrication of high frequency SAW devices with buffer layer Al2O3 thin film applied with AlN thin film by RF magnetron sputteing
碩士 === 大同大學 === 光電工程研究所 === 96 === Now communication elements are developing towards high frequency. SAW devices must have high velocity, high electromechanical coupling coefficient, low insertion loss. SAW devices composed of the piezoelectric thin film and different substrate materials or buffer l...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11772960269367729202 |