| Summary: | 碩士 === 國立臺北科技大學 === 機電整合研究所 === 96 === The main objectives of this thesis aim to fabricate Carbon nanotube field-effect transistors (CNTFETs) combined with standard CMOS process. In this thesis, we will discuss the properties and fabrication of carbon nanotubes electronic devices on a CMOS chips. This research utilizes several kinds of techniques to reach purposes, such as, low temperature fabrication, manipulate technique (dielectrophoresis force), localized techniques, and surface modification by self-assembled monolayer (SAM), and moreover, to investigate the standard electrical transport characteristics of these CNTFETs. In the experimental process, the SWCNTs-based electronic devices microstructures are fabricated by standard CMOS process and wet etching process (post-process). Finally, CNTs are deposited and aligned CNTs on the predefined electrode pairs by using alternating current dielectrophoresis (AC-DEP) or photo resist defined adherent region for CNTs to complete the fabrication of SWCNTs-based electronic devices fabrication. These SWCNTs-based electronic devices are successfully fabricated and characteristics of the devices possess both weak gate modulation and no gate modulation, respectively. The former shows a turn-on current of 2nA and a conducting current ration of 2-5 folds, which is similar to the conventional silicon-based p-channel MOSFETs, while the latter is similar to characteristics of resistors. After utilizing the electroless plating to replace the low work function of TiN electrodes (~3.74eV) with the high work function of Ni/Au electrodes (~5.1eV), the formation of an improved metal-CNT contact and the reduced probabilities of surface oxidation help improve the performance of the CNT devices and promote the current of more than 10 times. Finally, the ideal of novel chemical and bio sensors, which relies on the CNTFETs technology combined with CMOS circuitry can be made on a single chip in the future.
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