A Study of MEMS Devices Integration for RF CMOS Power Amplifier

• Main Authors: Shih-Han Hung, 洪士涵
• Other Authors: 黃榮堂
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/ht8j8d

碩士 === 國立臺北科技大學 === 機電整合研究所 === 96 === Nowadays, communication system development toward MMIC and SOC become more and more massive. Due to the reason, using the standard CMOS process for RF communication system design has been regarded as a valuable research. Since CMOS process develops rapidly and its feature sizes reduces gradually, it make the operation speed faster、the power consumption reduced and the operation frequency increased. The increased operation frequency is the most important for RF communication system designs. Therefore, CMOS elements can be applied to RF communication systems widely. The study demonstrates that the Class AB power amplifier based on RF CMOS integrates with MEMS Devices. Because the system is to extend the battery life of sensing points, the power amplifier is necessary to have the characteristic of high efficiency. The power amplifier fabrication is based on TSMC 0.18μm 1P6M CMOS process. Its operation voltage is 1.8 V. The experimental results show: when the frequency is 2.4GHz and the input power is -10dBm, the output power is 14dBm and its PAE is 30%；When the frequency is 1.8GHz and the input power is -10dBm, the output power is 14dBm and its PAE is 24%. We desire to design the high integrated and low power consumption power amplifier. By the circuit simulations, we design the On-chip power amplifier. Avoiding using Lump elements is for the reduction of the area consumption. Moreover, we use 1.8 V low voltage. PAE is up to more 30%.