| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 96 === The present paper reports on the photovoltaic properties of zinc phthalocyanine (ZnPc) films with various dopants, sandwiched between indium tin oxide (ITO) and n-type silicon (Si) substrate, were investigated. The ZnPc films were realized by entrapping the molecules in a poly(methyl methacrylate) (PMMA) matrix by stirring and heating solution. For the ITO/p-ZnPc/n-Si sandwich structure solar cells, which ZnPc doped with I2 and without post-annealing, the measured parameters were the short-circuit current density (Jsc), the open-circuit voltage (Voc), the maximum output power (Pm), the fill factor (FF) and the efficiency (η), which had values of were 28.8 mA/cm2, 0.46 V, 5.55 mW/cm2, 0.42 and 5.55 %, respectively, under AM 1.5 illumination.
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