AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications
碩士 === 國立臺北科技大學 === 光電工程系研究所 === 96 === This work discusses AlN nanoporous buffer layer prepared by anodic aluminum oxide (AAO) process for GaN-based light-emitting diode (LED) applications. After AAO process, the mean pore spacing and pore diameter of the AlN nanoporous buffer layer were in the ran...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/fh5t8k |