AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications

碩士 === 國立臺北科技大學 === 光電工程系研究所 === 96 === This work discusses AlN nanoporous buffer layer prepared by anodic aluminum oxide (AAO) process for GaN-based light-emitting diode (LED) applications. After AAO process, the mean pore spacing and pore diameter of the AlN nanoporous buffer layer were in the ran...

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Main Authors:	Chih-Kai Wang, 王致凱
Other Authors:	Lung-Chien Chen
Format:	Others
Language:	zh-TW
Published:	2008
Online Access:	http://ndltd.ncl.edu.tw/handle/fh5t8k

id	ndltd-TW-096TIT05124035
record_format	oai_dc
spelling	ndltd-TW-096TIT051240352019-07-21T03:37:10Z http://ndltd.ncl.edu.tw/handle/fh5t8k AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications 利用陽極處理製作奈米孔洞AlN緩衝層及其在GaN-basedLED之應用 Chih-Kai Wang 王致凱碩士國立臺北科技大學光電工程系研究所 96 This work discusses AlN nanoporous buffer layer prepared by anodic aluminum oxide (AAO) process for GaN-based light-emitting diode (LED) applications. After AAO process, the mean pore spacing and pore diameter of the AlN nanoporous buffer layer were in the range of 150 ~ 180 nm and 80 ~ 120 nm, respectively. The light output power of the GaN-based LED with an AlN nanoporous buffer layer was higher about 38.2% than that of the GaN-based LED without an AlN nanoporous buffer layer at an injection current of 20 mA. At aninjection current of 80 mA, only about 32.9% of enhancement factor on light extraction was obtained. Lung-Chien Chen 陳隆建 2008 學位論文 ; thesis 77 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立臺北科技大學 === 光電工程系研究所 === 96 === This work discusses AlN nanoporous buffer layer prepared by anodic aluminum oxide (AAO) process for GaN-based light-emitting diode (LED) applications. After AAO process, the mean pore spacing and pore diameter of the AlN nanoporous buffer layer were in the range of 150 ~ 180 nm and 80 ~ 120 nm, respectively. The light output power of the GaN-based LED with an AlN nanoporous buffer layer was higher about 38.2% than that of the GaN-based LED without an AlN nanoporous buffer layer at an injection current of 20 mA. At aninjection current of 80 mA, only about 32.9% of enhancement factor on light extraction was obtained.
author2	Lung-Chien Chen
author_facet	Lung-Chien Chen Chih-Kai Wang 王致凱
author	Chih-Kai Wang 王致凱
spellingShingle	Chih-Kai Wang 王致凱 AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications
author_sort	Chih-Kai Wang
title	AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications
title_short	AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications
title_full	AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications
title_fullStr	AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications
title_full_unstemmed	AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications
title_sort	aln nanoporus buffer layer prepared by anodic aluminum oxide and gan-based led applications
publishDate	2008
url	http://ndltd.ncl.edu.tw/handle/fh5t8k
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AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications

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