AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications
碩士 === 國立臺北科技大學 === 光電工程系研究所 === 96 === This work discusses AlN nanoporous buffer layer prepared by anodic aluminum oxide (AAO) process for GaN-based light-emitting diode (LED) applications. After AAO process, the mean pore spacing and pore diameter of the AlN nanoporous buffer layer were in the ran...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/fh5t8k |
| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 96 === This work discusses AlN nanoporous buffer layer prepared by anodic aluminum oxide (AAO) process for GaN-based light-emitting diode (LED) applications. After AAO process, the mean pore spacing and pore diameter of the AlN nanoporous buffer layer were in the range of 150 ~ 180 nm and 80 ~ 120 nm, respectively. The light output power of the GaN-based LED with an AlN nanoporous buffer layer was higher about 38.2% than that of the GaN-based LED without an AlN nanoporous buffer layer at an injection current of 20 mA. At aninjection current of 80 mA, only about 32.9% of enhancement factor on light extraction was obtained.
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