Growth and Characterization of Metastable ZnS1-xOx Thin Films
碩士 === 國立臺北科技大學 === 光電工程系研究所 === 96 === In this thesis, the pulsed laser depositiion growth and characterization of metastable ZnS1-xOx (0 < x < 1) alloy grown on a ZnO buffer layer on C-plane sapphire substrate were investigated. A ZnS target was laser ablated in an oxygen atmosphere to form...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2364n6 |
| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 96 === In this thesis, the pulsed laser depositiion growth and characterization of metastable ZnS1-xOx (0 < x < 1) alloy grown on a ZnO buffer layer on C-plane sapphire substrate were investigated. A ZnS target was laser ablated in an oxygen atmosphere to form the ZnSO film on the substrate.X-ray diffraction measurements revealed that the crystalline properties and the composition of the alloy strongly depend on the substrate temperature. Lower growth temperature favors higher incorporated oxygen content. The (0002) reflection peak shifts continuously from the ZnS value to the ZnO value by increasing the O2 partial pressure, indicating the alloy ZnS1-xOx of almost complete composition range was successfully synthesized.
The absorption coefficients retrieved from optical transmission measurements were used to determine the band gap energies. We find that the as-grown ZnSO films were unstable under the illumination of the UV light(form the xenon lamp)used in the transsmissiom measurements. The composition, crystallinity, and the interfase of the samples were very sensitive to the UV light.
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