Research on speed of anodic bonding by applying different metal electrodes

• Main Authors: Sheng-Kuai Yang, 楊勝凱
• Other Authors: Fuh-Shyang Juang
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/v8t759

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 96 === The chip package technology of MEMS (micro-electro-mechanical systems, MEMS) is wildly used in commercial fabrication process, and anodic bonding plays an important role in mediumless joint technology of current package fabrication process. By means of an electrostatic field generated between metal and glass, the use of ion bond can achieve high bonding strength. Was focused on different metallic material (the upper electrode, the under heating electrode) and driving voltage in order to rise the bonding efficiency, lower the voltage and temperature of need by the conductive material, the heat transfer characteristic, the trend of driving voltage and its wave form. Experiments show that Aluminum performs better than copper and stainless steel in the condition of heating electrode of 400 ℃, 300-900 V and use a sampling area about 20 × 20 mm2. Under the condition of fixed temperature of 400 ℃, 700 V, and bonding time of 90 s, the bonding area of aluminum electrode reaches 45.11 �s; the bonding area of copper electrode only reaches 33.66 �s. The main reason is because cooper oxidize faster than aluminum, thus resulting in greater current causing slower bonding ratio when the heating temperature is higher than 150 ℃. in the condition of fixed temperature of 400 ℃, 500 V, total bonding time of 2 min, pulse voltage power cycle of 10s, high-low per 5 sec, applying pulse voltage can achieve bonding area of 18.87.