Study of Cu film directly electroplating on InduimTin Oxide diffusion barrier

• Main Authors: Chu-Mo Chien, 簡竹模
• Other Authors: Yee-Shin Chang
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/q7kbpq

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 96 === In the research, the effect of electroplating Copper (Cu) film on Indium Tin Oxide (ITO) diffusion barrier was studied, improved by additional treatments and finally compared with electroless Cu and magnetron sputter Cu film. First, silicon (Si) substrate was deposited ITO thin film with 10 and 5 nm thickness by Magnetron Sputter in vacuum, separately, then electro Cu film was electroplated onto it, and annealed at 300 to 800 ℃ for 5 min in rapid thermal annealing (RTA) furnace in vacuum and atmosphere of Ar and H2 with a volume ratio of 95:5, respectively. The microstructure, phase, and sheet resistance of various Cu/ITO/Si sample were observed and measured by transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray diffractometer (XRD), and four-point probe. To improve the interface between Cu and ITO film, a seed layer of ruthenium (Ru) film with 5 nm thickness was coated onto ITO film by Magnetron sputter before electroplating Cu process. And to inhibit Cu agglomeration in annealing process, a capping layer of Co-W-P film was electroless plated onto Cu film. Finally, the influence of Cu film Cu/ITO/Si by electroplating, Electroless plating and Magnetron Sputtering process on ITO diffusion barrier was inrestigated. The results show that Cu film in Cu/ITO/Si, which was deposited by electroplating and electroless plating process could hinder the diffusion of Cu up to 600 ℃; the Cu film by magnetron sputtering process in vacuum failed at 700 ℃.