Study of ZrO2-TiO2 Dielectric Thin Film by the Sol-gel Method

• Main Authors: Shih-Yao Lin, 林詩堯
• Other Authors: Cheng-Hsing Hsu
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/25595700470588726982

碩士 === 國立聯合大學 === 電機工程學系碩士班 === 96 === The ZrO2-TiO2 (ZrTiO4) thin films were deposited on ITO/Glass substrates by using sol-gel technology. The effects of various thermal treatments on the physical properties and electric properties of ZrO2-TiO2 thin film also have been studied with various heat-treated temperatures, heat-treated times, and annealed temperatures. Besides, the ZrO2-TiO2 thin film were investigated by resistance switch effect and expected to applied in resistive random-access memory (RRAM). The ZrTiO4 thin film in this study were polycrystalline when annealed temperature of 700oC for 1hr. When the annealed temperature increased, the grain size more large, and the grain size of non-heated treated thin film were large than heated treated thin films. The surface roughness of thin film was reduced by heated treated temperature and annealed temperature obtained from AFM images. The leakage current mechanism of thin film in high annealed temperature was observed as Schottky Emission, and there were always be Pool-Frenkel mechanism in low annealed temperature. The optimum conditions for the leakage current of ZrTiO4 thin film in this study were heat-treated temperature of 450oC for 30 min and annealed temperature of 800oC for 1hr. It could be arrived 1.04×10-6 (A/cm2) when the electric field on 10 (kV/cm). In the RRAM characteristic, all of the thin films have slightly resistance switching effect in annealed 600oC and 700oC for 1hr. The best of the resistance switching in this study were non-heated treated temperature and annealed temperature 600oC for 1 hr could be arrived 102. The result show that ZrTiO4 thin film were a candidate for applied in RRAM.