The properties of copper using electroplating for blind filling in advanced electronic package

• Main Authors: Yu-wen Wang, 王裕文
• Other Authors: Wen-ping Yang
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/75964152649694224797

碩士 === 國立聯合大學 === 化學工程學系碩士班 === 96 === With the miniaturization of electronic devices,the connection reliability between integrated circuits(IC)and the external circuits has become important. A shorter connection between the IC chip and the substrate is demanded with the downsizing of circuit packaging. Accordingly,advanced plating technology is strongly in demanded for the connection between the IC the and the circuit. In this report, the development of micro technology for electronic packaging, especially the plating of micro-vias using a wet process. This study presents two base recipes method: the low copper high acid solution(plane formula), and the high copper low acid solution(deep formula). The effects of using different additives at various concentrations on the properties of the plating film were investigated by modification CVS and potentiodynamic. Since the obove properties, three different recipes of complex additives can be used to prepare the copper films of micro-via by the direct plating(DC). The characteristics of the copper films were investigated by scanning electron microscopy(SEM), atomic force microscopy(AFM), four-point probe measurement, and scanning probe microscope(SPM). The results of CVS curves showed that the PEG additives which possessed molecular weight 1000 presents the transition change at 100 ppm and high concentration of this PEG is promotes deposition.The dissolved curves of copper forms twin peaks of thiourea at high concentration (500ppm) and it possibly has two kinds of oxidized dissolution reaction mechanism. The morphology showed that the PEG1000+MPSA+JGB prescription has a good smooth of copper film which the roughness and the resistivity is better than commerce recipe. The high copper low acid solution has a better relative deposition thickness than the low copper high acid solution by the value is more higher of the JGB which can achieved about at 1.7. Keywords：additives、cycle voltage、potentiodynamic、electroplating、micro- via、relative deposition thickness