The Study of the MIS Device with AlN Thin Film and Its Characterizations

• Main Authors: Wei-Huang Lin, 林偉湟
• Other Authors: Ming-Chang Shih
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/74781645953863958874

碩士 === 國立高雄大學 === 電機工程學系--先進電子構裝技術產業研發碩 === 96 === The AlN thin film has been applied in high speed and high power advanced micro-electronic and photo-electronic devices with its excellent properties of thermal conductivity, chemical resistance, high band gap and high dielectric constant. In this thesis, we have applied the Excimer Laser Sputtering technique for deposition of AlN thin film on a p-type Si(100) substrate at room temperature, and investigate the characteristics of using AlN thin film on MIS device, which can provide photo detection by generating electron-hole pairs in the depletion region between the interface of AlN and Si substrate. Measurements of the deposition rate as function of laser fluency have been done. I-V, C-V measurement, thin film thickness, dielectric constant and reflection / transmission characteristics, we used to study the effects of photo-responsivity of the MIS device are presented. These results will provide reference for developing the Si-base photo-detection devices in the future.