The Study of the HfO2 Thin Film Deposition by Excimer Laser Sputtering and Its Photoelectric Characterization and Application of MIS Photodetector
碩士 === 國立高雄大學 === 電機工程學系--先進電子構裝技術產業研發碩 === 96 === In this thesis, we have demonstrated the deposition of HfO2 thin film on Si（100） by Excimer laser sputtering, and the characterization of optical and dielectric properties in Metal-Insulation-Semiconductor（MIS） devcie structure. The fabrication of...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71718485277488133983 |
| Summary: | 碩士 === 國立高雄大學 === 電機工程學系--先進電子構裝技術產業研發碩 === 96 === In this thesis, we have demonstrated the deposition of HfO2 thin film on Si（100） by Excimer laser sputtering, and the characterization of optical and dielectric properties in Metal-Insulation-Semiconductor（MIS） devcie structure.
The fabrication of using HfO2 as the insulating layer in the MIS structure has bee demonstrated. We have shown high responsivity at UV range iowing to the highly transparent HfO2 thin film deposited by this experiment, and it is helpful for the developing a si based IV enhanced photo-detector.
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