Design and Implementation of Injection-Locked Frequency Divider

• Main Authors: Chi-Wen Lin, 林啟文
• Other Authors: Miin-Horng Juang
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/51587006868351441806

碩士 === 國立臺灣科技大學 === 光電工程研究所 === 96 === This thesis presents three injection locked frequency dividers with tunable active inductors (TAIs), which are implemented by using standard TSMC SiGe 0.35um, 0.35um and 0.18um CMOS process respectively. An injection locked frequency divider (ILFD) employing tunable active inductors for the LC-tanks. The aim of using tunable active inductor is to extend the locking range and scaling down chip size. In injection locked frequency dividers (ILFDs), the first injection locked frequency divider is based on a cross-coupled MOSFET voltage-controlled oscillator (VCO) with the heterojunction bipolar transistor (HBT) active-inductor. The locking range is from 4~5.9 GHz when the injection input power is 0 dBm. The die area is 0.45 x 0.46 mm2. The second presents a divide-by-4 quadrature injection locked frequency divider (ILFD) employing tunable active inductors (TAIs). The locking range is from 1.438~6.04 GHz when the injection input power is 0 dBm. The die area is 0.976 x 0.812 mm2. The third injection locked frequency divider (ILFD) with tunable active inductors (TAIs) is performed by injecting differential signal to the bodies of cross-coupled transistors in the VCO. The locking range is from 1.55~5.14 GHz when the injection input power is 0 dBm. The die area is 0.462 x 0.370 mm2.